SIMS (Secondary Ion Mass Spectrometry)

//SIMS (Secondary Ion Mass Spectrometry)
SIMS (Secondary Ion Mass Spectrometry) 2017-02-06T23:22:47+00:00

Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) is technique used for surface material characterization of a solid specimen.   SIMS is recognized as the most sensitive elemental, isotopic and molecular composition analysis the uppermost atomic layers of the specimen.  The following are a few strength and limitations of SIMS:

Strengths:

  • The analysis consumes very small sample (essentially non-destructive)
  • High sensitivity means that specimens with low concentration levels (down to Parts Per Billion levels) can be analyzed with SIMS.
  • High sensitivity also allows for depth profiling of molecular and elemental abundances as well as isotopic ratios.
  • SIn situ analysis eliminates the need for complex sample preparation in most cases.

Limitations:

Because both atomic and molecular species are produced during sputtering of the samples, not all elements in all substrates (matrices) can be analyzed quantitatively.

Typical Applications:

  • Measuring quantitative depth profiling of dopants and impurities in semiconductor substrates
  • Identifying lubricants on magnetic hard discs
  • Profiling thickness of insulating films on glass
  • Mapping elemental and molecular patterned surfaces
  • Identifying compounds in thin organic films
  • Determining the extent of crosslinking in polymers
Secondary Ion Mass Spectrometry (SIMS)